IRF511 DATASHEET PDF

IRF Transistor Datasheet, IRF Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Datasheet, Download IRF datasheet. Cross ref. Similar parts: CSDKCS , CSDKCS, CSDKCS, CSDKCS, CSDKCS. IRF datasheet, IRF circuit, IRF data sheet: FAIRCHILD – N-Channel Power MOSFETs, A, V,alldatasheet, datasheet, Datasheet search site .

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IRF Datasheet(PDF) – Fairchild Semiconductor

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For a better experience, please enable JavaScript in your browser before proceeding. Thread starter breadboardguy Start date Jul 22, I need to build a h-bridge for my mobile breadboard aka hammerhead cause of its shape. I did all the schematics with some features like all inputs high impossible so no short but as i am a newb BEAM Circuits — Steve Bolt’s H-bridges In my drawings i only used n-channel irf to source the motor and to complete ifr511 circuit to the – terminal of the battery but on that website, two type are use npn and pnp.

Will i be fine to use only the irf on my robot? I have doubts that it is a more practical way of doing with npn and pnp combo I also need to know where to place the flyback diode please. Irff511 you if you post of course.

You can easily use all NMOS fets, though you will need a bootstrap cap and diode on the high side dqtasheet. Place the freewheel diode as close to the motor as possible. Right on the motor if you can. Place 18v zeners between the gate and source to eliminate transient high voltages and self-latching.

IRF511 MOSFET. Datasheet pdf. Equivalent

Also place a pF ceramic cap between the drain and source of all the mosfets. This helps reduce the ringing effect from the transistor turning on and off. By freewheel diode, do you mean fly back diode? If so, because the current will go in both direction in the motor, placing a diode will shortcut the whole thing.

I’ve seen circuit where they place it between the drain and source of each transistor, will it do the job? Sorry, was braindead on the diode. Was thinking single direction, even though you obviously said h-bridge. I blame lack of coffee. Yes, place them on the drain and source of each mosfet. It so funny how people never read for themselves It has source to drain diode built in for inductive loads. If you read the actual datasheets on the product, nowhere does it say the body diode should be used for inductive loads.

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That is probably just something added by the creator of that web page.

Read these app notes from International Rectifier and Fairchild about mosfets They both say using the body diode for inductive current can blow the fet. Sure, many people get away with it, but why take the chance when a simple schottkey is much better at the job anyway.

It gets even worse if you are in an h-bridge configuration. Nope the man that quoted it on his web site is right it tells in the data sheet read it’s on the first page here a quote. Yes, but it says nothing about using it for inductive loads.

I’m sure they thought it could be used for that at some point, until they started finding failures using it that way. I’m sure many people think that’s why they are there, just from looking at the datasheets.

I’m sure marketing probably still has a hand in making sure it’s listed as a “feature. But, why take the chance in blowing up your mosfets because you don’t want to use an extra diode that costs a few datasyeet That just seems silly to me. Read the app notes. They are incredibly enlightening.

It dose say It has source to drain diode built in for inductive loads. Hi, I can add a little information here I can state that it is a fact that there are many power converters out there that do not use an ‘extra’ diode in parallel with the MOSFET, and depend entirely on the integral body diode to take care of the back emf of any inductive loads. I actually designed converters for a company way back when and have viewed a multitude of other designs that were similar that were designed by other people that had a lot of knowledge in the field.

The bottom line is that whether or not you can use the integral body diode depends on the application, in how much power that diode will have to dissipate. If you look on any data sheet you will find that that particular diode has a rather high forward voltage, much higher than an external Schottky would have for example.

This means that the transistor using the internal diode has to dissipate an extra amount of power, not only while the thing is in conduction, but also when the diode is in conduction, which increases the total power dissipation of that one little package even if the forward voltage of the internal diode wasnt higher than normal. This is probably the biggest factor in determining if you can use the internal diode or not.

Secondary usually is the reverse recovery, which can be longer than an external carefully located high speed diode.

The extra power dissipation has to be carefully examined relative to the application.

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h-bridge fet transistors ?

If the application can stand the extra loss dataasheet power and the device itself wont overheat, then there is no reason not to use the internal diode. On the other hand, if the device overheats or has to be used in high heat datasgeet then it would probably not work well to use that internal diode. Some good simulations might tell what is best to do with a given application, and some prototype measurements would also help.

As a quick example of an application that does not require an extra diode, consider a relay driver where the relay turns on and off once per hour. The integral body diode sees a current spike once per hour that lasts probably 1ms or maybe even 10ms, but after datasheeh it has almost 60 minutes to cool back down. Adding an extra diode would really be silly here. On the other hand, a very high speed H bridge may benefit from adding extra datashset because doing that, if not anything else, moves some of the heat out of the transistor package and therefore keeps it cooler.

A careful analysis has to be urf511 and some prototype measurements would verify the fatasheet for any extra diodes. As a final note, we’d also have to look at the effect of the negative voltage on the drain when the diode conducts, which might force us to have to use a gate drive signal that actually goes a little negative rather than to zero as many designs do N-MOSFET application. Thank you evryone to had answered my questions so fast, electro-tech-online really is a great community.

However, i have a geometry question that is burning irt511 lips but i only see my father in two days To get my h-bridge to move, i need sensor, mine is a ir sharp range finder on a servo motor i might also make a version with an lcd screen and sonar range datashete to see in total dark the range finder moves of 1 degree, takes the range of the object in front of it and repeat, like a sort of sonar.

The problem is that obviously geometry is involved and i dont have very advanced notions i am 14 after all and You must log in or register to reply here. Replacing a 4 pin leaded inductor with a 2 pin Started by gkmaia Yesterday at Potentiometer Questions Started by norbss Yesterday at Started by fastline Yesterday irt511 8: Just saying hello Started by MichaelaJoy Yesterday at 6: This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.

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