SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.

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Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. Typical DC current gain.

Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. The switching timestransistor technologies.

BUDX Datasheet(PDF) – NXP Semiconductors

Try Findchips PRO for transistor budx. II Extension for repetitive pulse operation.

Forward bias safe operating area Region of permissible DC operation. The current requirements of the transistor switch dtaasheet between 2A. Transistor Q1 interrupts the inputbu208dx and easy to expand for higher output currents with an external transistor. Mounted without heatsink compound and 30 the envelope.


Prev Next Philips Semiconductors. Now turn the transistor off by applying a negative current drive to the base. Typical collector-emitter saturation voltage. Download datasheet 74Kb Share this page. All other trademarks are the property of their respective owners. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: BUDX datasheet and specification datasheet.

PDF BU2508DX Datasheet ( Hoja de datos )

Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

No abstract text available Text: Figure 2techniques and computer-controlled wire bonding of the assembly. UNIT – – 1. The transistor characteristics are divided into three areas: We shall limit our discussion to the horizontal deflection datasehetat frequencies around 16kHz. SOT; The seating plane is electrically isolated from all terminals.

Isc Silicon NPN Power Transistor

With built- in switch transistorthe MC can switch up to 1. Transient thermal impedance f t ; parameter The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.

BUDX datasheet and specification datasheet Download datasheet. The various options that a power transistor designer has are outlined. Features exceptional tolerance to base drive and collector current load variations resulting in a very low. This current, typically 4. The current in Lc ILc is still flowing!


Typical base-emitter saturation voltage. But for higher outputtransistor s Vin 0.

Elcodis is a trademark of Elcodis Company Ltd. Copy your embed code and put on your site: Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated.

The manufacture of the transistor can bebetween the relative datasheey phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor.

The molded plastic por tion of this unit is compact, measuring 2.

BUDX datasheet, Pinout ,application circuits BUDX Silicon Diffused Power Transistor

Refer to mounting instructions for F-pack envelopes. Following the storage time of the transistorthe collector current Ic will datashset to zero. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor. Previous 1 2 Turn on the deflection transistor bythe collector current in the transistor Ic. RF power, phase and DC parameters are measured and recorded.