BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Typical collector-emitter saturation voltage.
Exposure to limiting values for extended periods may affect device reliability. SOT; The seating plane is electrically isolated from all terminals. This data sheet contains target or goal specifications for product development. July 7 Rev 1. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. July 1 Rev 1.
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Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.
II Extension for repetitive pulse operation. Refer to mounting instructions for F-pack envelopes. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Buaf transistor equivalent substitute crossreference search. Preliminary specification This data sheet contains preliminary data; supplementary bh2508df may be published later. July 5 Rev 1. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
Npn triple diffused buaf planar silicon transistor color tv horizontal output bu2508dd damper diode to3pml. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Typical collector storage and fall time. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
BU 2508DF PHI
Buaf datasheet, equivalent, cross bu2508dt search. No liability will be accepted by the publisher for any consequence of its use. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
Silicon diffused power transistor buaf datasheet catalog. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
July 6 Rev 1. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.
Typical base-emitter saturation voltage. July 2 Rev 1.
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High collectorbase voltagevcbov high speed switching. Typical DC current gain. Budf philips semiconductors, budf datasheet.
BUDF 데이터시트(PDF) – Tiger Electronic Co.,Ltd
Philips customers using or selling these products for use in such applications do so at datasheft own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Datxsheet bias safe operating area. This data sheet contains final product specifications. Stress above one or more of the limiting values may cause permanent damage to the device.
C I Region of permissible DC operation. Application information Where application information is given, it is advisory and does not form part of the specification. C 1 Turn-off current. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.